2SC4227 Datasheet, PDF (4/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

INSERTION POWER GAIN vs.
COLLECTOR CURRENT
15
VCE = 3 V
f = 1 GHz
10
5
0
0.5 1
5 10
50
IC – Collector Current – mA
NOISE FIGURE vs.
COLLECTOR CURRENT
5
VCE = 3 V
f = 1 GHz
4
3
2
1
0
0.5 1.0
5.0 10
50
IC – Collector Current – mA
2SC4227
INSERTION POWER GAIN vs.
FREQUENCY
25
VCE = 3 V
IC = 7 mA
20
15
10
5
0
0.1 0.2
0.5 1.0 2.0
5.0
f – Frequency – GHz
4