2SC4227 Datasheet, PDF (2/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

2SC4227
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|²
NF
MIN.
40
4.5
10
TYP.
7.0
0.45
12
1.4
MAX.
0.8
0.8
240
0.9
2.7
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITION
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mA^*1
VCE = 3 V, IC = 7 mA
VCE = 3 V, IE = 0, f = 1 MHz^*2
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
*1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
Marking
hFE
R33
R33
40 to 90
R34
R34
70 to 150
R35
R35
110 to 240
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