2SC4227 Datasheet, PDF (3/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
50
100
150
TA – Ambient Temperature – °C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
VCE = 3 V
10
0
0.5
1.0
VBE – Base to Emitter Voltage – V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
VCB – Collector to Base Voltage – V
2SC4227
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
160 µA
140 µA
15
120 µA
100 µA
10
80 µA
60 µA
5
40 µA
IB = 20 µA
0
0.5
1.0
VCE – Collector to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 3 V
100
50
20
10
0.5 1
5 10
50
IC – Collector Current – mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = 3 V
f = 1 GHz
8
6
4
2
0
0.5 1.0
5.0 10
50
IC – Collector Current – mA
3