2SC4092 Datasheet, PDF (4/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 10 V, f = 0.1, 0.2 to 2.0 GHz (Step 200 MHz)
0.09
0.007.413300.008.42
0.41
120
0.10
0.40
110
0.11
0.39
100
0.12 0.13
0.38 0.37
90
0.2
0.14
0.36
80
0.15
0.35
70
0.16
0.34
060
0.303.17 _500.302.18
ONENT
0.4
0.6
3.0
2 GHz
0.8
1.0
4.0
6.0
IC = 5 mA
S11e
0.1
0.2
0.3
0.4
IC = 20 mA
10
20
50
REACTANCE COMPONENT
I = 20 mA ( ) ––R––
ZO
0.2
C
2 GHz
0.4
0.6
0.8
IC = 5 mA
S22e
0.1 GHz
0.1 GHz
0.1 GHz
2SC4092
0.1 GHz
150°
180°
S21e-FREQUENCY CONDITION VCE = 10 V
90°
120°
0.2 GHz
60°
IC = 20 mA
30°
150°
IC = 5 mA
0.1 GHz
S21e
2 GHz
04 8
12 16 20 ^{0° 180°}
S12e-FREQUENCY
120°
S12e
CONDITION VCE = 10 V
90°
60°
IC = 20 mA
2 GHz
30°
IC = 5 mA
0.1 GHz
0 0.04 0.08 0.12 0.16 0.2 ^0°
−150°
−120°
−90°
−30°
−150°
−60°
−120°
−90°
−30°
−60°
4