2SC4092 Datasheet, PDF (2/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 °C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
30
20
10
0.5 1
2
5 10 20
IC-Collector Current-mA
50 70
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = 10 V
5
2
1
0.5
1
35
10
30
IC-Collector Current-mA
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 MHz
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20 30
VCB-Collector to Base Voltage-V
2
2SC4092
70
50
20
10
5
2
1
0.5
0.5
16
12
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 10 V
0.6
0.7
0.8
0.9
VBE-Base to Emitter Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1 GHz
8
4
0
0.5 1
2
5 10 20 40
IC-Collector Current-mA
NOISE FIGURE.
COLLECTOR CURRENT
7
VCE = 10 V
f = 1.2 GHz
6
5
4
3
2
1
0
0.5 1
2
5 10 20
IC-Collector Current-mA
50 70