2SC4092 Datasheet, PDF (1/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for low-
noise amplifier at VHF, UHF band.
It is contained in 4 pins mini-mold package which enables high-isolation
gain.
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
FEATURES
• NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA
• S21e² = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
70
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
40
Gain Bandwidth Product
fT
6
Output Capacitance
Insertion Power Gain
Cob
0.55
S21e²
9.5
12
Noise Figure
NF
1.5
Maximum Available Gain
MAG
14.5
MAX.
0.1
0.1
200
0.9
3.0
5°
5°
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
UNIT
µA
µA
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 15 V, IE = 0
VEB = 2.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA f = 1.0 GHz
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class
R4/RD *
Marking
R4
hFE
40 to 120
R5/RE *
R5
100 to 200
* Old Specification / New Specification
Document No. P10363EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
©
1987