3SK255 Datasheet, PDF (3/8 Pages) NEC – RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
130 mW
100
0
25
50
75
100 125
TA – Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25
VDS = 3.5 V
3.0 V
2.5 V
VG2S = 3.5 V
20
2.0 V
15
10
1.5 V
5
1.0 V
0
0.5
1.0
1.5
2.0
2.5
VG1S – Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
VDS = 3.5 V
f = 1 kHz
32
VG2S = 3.5 V
24
3.0 V
16
2.5 V
8
1.5 V
2.0 V
1.0 V
0
10
20
ID – Drain Current – mA
3SK255
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
VG2S = 3.0 V
20
VG1S = 1.2 V
1.0 V
15
0.8 V
10
0.6 V
5
0.4 V
0.2 V
0
5
10
VDS – Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
VDS = 3.5 V
f = 1 kHz
32
VG2S = 3.5 V
24
16
8
0
–0.5
2.0 V
1.5 V
3.0 V
2.5 V
1.0 V
0
0.5
1.0
1.5
2.0
VG1S – Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
ID = 7 mA
(at VDS = 3.5 V,
4.0
VG2S = 3.0 V)
f = 1 MHz
3.0
2.0
1.0
0
–1.0
0
1.0
2.0
3.0
4.0
VG2S – Gate2 to Source Voltage – V
3