3SK255 Datasheet, PDF (1/8 Pages) NEC – RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK255
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Low VDD Use
: (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz)
• Suitable for uses as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package
: 4 Pins Super Mini Mold
PACKAGE DIMENSIONS
(Unit: mm)
2.1±0.2
1.25±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
18
V
Gate1 to Source Voltage
VG1S
±8^*1
V
Gate2 to Source Voltage
VG2S
±8^*1
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
25
mA
Total Power Dissipation
PD
130
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125 °C
*1: RL ≥ 10 kΩ
*2: Free air
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10586EJ3V0DS00 (3rd edition)
Date Published June 1996 P
Printed in Japan
©
1993