3SK255 Datasheet, PDF (2/8 Pages) NEC – RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

3SK255
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
SYMBOL
BVDSX
IDSX
VG1S(off)
VG2S(off)
IG1SS
IG2SS
MIN.
18
0.5
–1.0
0
Forward Transfer Admittance
|yfs|
14
Input Capacitance
Ciss
1.2
Output Capacitance
Coss
0.5
Reverse Transfer Capacitance
Crss
Power Gain
Gps
15
Noise Figure
NF
TYP.
0
0.5
19
1.7
1.0
0.01
18
1.8
MAX.
7.0
+1.0
1.0
±20
±20
24
2.2
1.5
0.03
21
3.0
UNIT
V
mA
V
V
nA
nA
mS
pF
pF
pF
dB
dB
TEST CONDITIONS
VG1S = VG2S = –2 V, ID = 10 µA
VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V
VDS = 3.5 V, VG2S = 3 V, ID = 10 µA
VDS = 3.5 V, VG1S = 3 V, ID = 10 µA
VDS = 0, VG2S = 0, VG1S = ±6 V
VDS = 0, VG1S = 0, VG2S = ±6 V
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 1 kHz
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 1 MHz
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 900 MHz
IDSX Classification
Rank
Marking
IDSX (mA)
U1G
U1G
0.5 to 7.0
2