3SK224 Datasheet, PDF (3/6 Pages) NEC – RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
50
75
100 125
TA – Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25 ^{VDS = 6 V}
20
VG2S = 3.0 V
2.5 V
2.0 V
1.5 V
15
1.0 V
10
5
–00.5
0.5 V
0
0.5
1.0
1.5
2.0
VG1S – Gate1 to Source Voltage – V
3SK224
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25 ^{VG2S = 3 V}
VG1S = 1.4 V
20
1.2 V
15
1.0 V
10
0.8 V
0.6 V
5
0.4 V
0.2 V
0
3
6
9
12
15
VDS – Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
VDS = 6 V
f = 1 kHz
32
24
16
8
–00.5
0
VG2S = 3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
0.5 V
0.5
1.0
1.5
2.0
VG1S – Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
VDS = 6 V
f = 1 kHz
32
VG2S = 3.0 V
24
2.5 V
2.0 V
16
8
0.5 V
0
4
1.0 V
8
12
1.5 V
16
20
ID – Drain Current – mA
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0 _{ID = 10 mA}
(at VDS = 6 V
VG2S = 3 V)
4.0 ^{f = 1 MHz}
3.0
2.0
1.0
–01.0
0
1.0
2.0
3.0
4.0
VG2S – Gate2 to Source Voltage – V
3