3SK224 Datasheet, PDF (2/6 Pages) NEC – RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

3SK224
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff
Voltage
Gate2 to Source Cutoff
Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer
Admittance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Power Gain
Noise Figure
SYMBOL
BVDSX
MIN.
18
IDSX
VG1S(off)
0.5
–1.5
VG2S(off)
–1.0
IG1SS
IG2SS
|yfs|
18
Ciss
1.2
CDSS
0.5
Crss
GPS
15.0
NF
TYP.
22
1.7
0.9
0.015
17.0
1.8
MAX.
15.0
+0.5
+1.0
±20
±20
2.2
1.2
0.025
2.5
UNIT
V
TEST CONDITIONS
VG1S = VG2S = –2 V, ID = 10 µA
mA
VDS = 6 V, VG2S = 3 V, VG1S = 0.5 V
V
VDS = 6 V, VG2S = 3 V, ID = 10 µA
V
VDS = 6 V, VG1S = 3 V, ID = 10 µA
nA
VDS = 0, VG2S = 0, VG1S = ±8 V
nA
VDS = 0, VG1S = 0, VG2S = ±8 V
mS VDS = 5 V, VG2S = 4 V, ID = 10 mA
f = 1 kHz
pF
VDS = 6 V, VG2S = 3 V, ID = 10 mA
pF
f = 1 MHz
pF
dB
VDS = 6 V, VG2S = 3 V, ID = 10 mA
dB
f = 900 MHz
IDSX Classification
Class
Marking
IDSX (mA)
U94/UID*
U94
0.5 to 7.0
* Old Specification/New Specification
U95/UIE*
U95
5.0 to 15.0
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltage or fields.
2