3SK224 Datasheet, PDF (1/6 Pages) NEC – RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK224
RF AMPLIFIER FOR UHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise Figure:
NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain:
GPS = 17 dB TYP. (f = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting: Embossed Type Taping
• Small Package:
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
18
V
Gate1 to Source Voltage
VG1S
±8 (±10)^*1
V
Gate2 to Source Voltage
VG2S
±8 (±10)^*1
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
25
mA
Total Power Dissipation
PD
200
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125
°C
*1 RL ≥ 10 kΩ
PACKAGE DIMENSIONS
(Unit: mm)
2.8^{+–00..12}
1.5^{+–00..12}
5° 5°
5° 5°
1. Source
2. Drain
3. Gate 2
4. Gate 1
Document No. P10576EJ2V0DS00 (2nd edition)
(Previous No. TD-2265)
Date Published August 1995 P
Printed in Japan
©
199839