3SK222 Datasheet, PDF (3/6 Pages) NEC – RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
50
75 100 125
TA – Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25 VDS = 6 V
20
15
VG2S = 4 V
3.5 V
3.0 V
2.5 V
2.0 V
10
5
1.5 V
1.0 V
0
0.5 1.0 1.5 2.0 2.5
VG1S – Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
VDS = 6 V
f = 1 kHz
32
24
16
8
1.0 V
0
4
1.5 V
8
VG2S = 4 V
3.5 V
3.0 V
2.0 V
2.5 V
12
16
20
ID – Drain Current – mA
3SK222
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
VG2S = 3 V
20
VG1S = 1.8 V
15
1.6 V
1.4 V
10
1.2 V
5
1.0 V
0.8 V
0.6 V
0
3
6
9
12
15
VDS – Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
VDS = 6 V
f = 1 kHz
32
24
VG2S = 4 V
16
3.0 V ^{3.5 V}
2.0 V ^{2.5 V}
8
1.5 V
1.0 V
0
0.5 1.0 1.5 2.0 2.5
VG1S – Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
7.0
ID = 10 mA
(at VDS = 6 V
VG2S = 4 V)
f = 1 MHz
6.0
5.0
4.0
3.0
2.0–1.0
0
1.0 2.0 3.0 4.0
VG2S – Gate2 to Source Voltage – V
3