3SK222 Datasheet, PDF (1/6 Pages) NEC – RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK222
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB
• Low Noise Figure:
NF1 = 1.2 dB TYP. (f = 200 MHz)
NF2 = 1.0 dB TYP. (f = 55 MHz)
• High Power Gain:
GPS = 23 dB TYP. (f = 200 MHz)
• Enhancement Type.
• Suitable for use as RF amplifier in FM tuner and VHF TV tuner.
• Automatically Mounting:
Embossed Type Taping
• Small Package:
4 Pins Mini Mold
PACKAGE DIMENSIONS
(Unit: mm)
2.8
+0.2
–0.3
1.5
+0.2
–0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
18
V
Gate1 to Source Voltage
VG1S
±8 (±10)^*1
V
Gate2 to Source Voltage
VG2S
±8 (±10)^*1
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
25
mA
Total Power Dissipation
PD
200
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125
°C
*1 RL ≥ 10 kΩ
5°
5°
5°
5°
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10574EJ2V0DS00 (2nd edition)
(Previous No. TD-2267)
Date Published August 1995 P
Printed in Japan
©
199839