3SK222 Datasheet, PDF (2/6 Pages) NEC – RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

3SK222
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff
Voltage
Gate2 to Source Cutoff
Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer
Admittance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Power Gain
Noise Figure 1
Noise Figure 2
SYMBOL
BVDSX
MIN.
18
IDSX
VG1S(off)
0.01
0
VG2S(off)
0
IG1SS
IG2SS
|yfs|
15
Ciss
3.6
CDSS
1.0
Crss
GPS
NF1
NF2
21.0
TYP.
19.5
4.3
1.5
0.02
23.0
1.2
1.0
MAX.
UNIT
V
TEST CONDITIONS
VG1S = VG2S = –2 V, ID = 10 µA
8.0
+1.0
mA
VDS = 6 V, VG2S = 3 V, VG1S = 0.75 V
V
VDS = 6 V, VG2S = 3 V, ID = 10 µA
+1.0
V
VDS = 6 V, VG2S = 3 V, ID = 10 µA
±20
±20
5.0
2.0
0.03
nA
VDS = 0, VG2S = 0, VG1S = ±8 V
nA
VDS = 0, VG1S = 0, VG2S = ±8 V
mS VDS = 5 V, VG2S = 4 V, ID = 10 mA
f = 1 kHz
pF
VDS = 6 V, VG2S = 3 V, ID = 10 mA
pF
f = 1 MHz
pF
dB
VDS = 6 V, VG2S = 4 V, ID = 10 mA
2.0
dB
f = 200 MHz
2.0
dB
VDS = 6 V, VG2S = 4 V, ID = 10 mA
f = 55 MHz
IDSX Classification
Class
Marking
IDSX (mA)
V21/VBA*
V21
0.01 to 3.0
* Old specification/New specification
V22/VBB*
V22
1.0 to 8.0
2