3SK134B Datasheet, PDF (3/5 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
Free air
300
200
100
0
25
50
75
100 125
TA – Ambient Temperature – °C
DRAIN CURRENT vs
GATE1 TO SOURCE VOLTAGE
20
VDS = 10 V _{VG2S = 5 V}
4V
3V
10
2V
1V
0
1.0
2.0
VG1S – Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
VDS = 10 V
f = 1 kHz
VG2S = 4 V
30
20
10
0
4
8
12
16
20
ID – Drain Current – mA
3SK134B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
VG2S = 4 V
20
VG1S = 1.2 V
1.1 V
15
1.0 V
0.9 V
10
0.8 V
5
0
5
10
15
20
VDS – Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40 _{VDS = 10 V}
f = 1 kHz
VG2S = 5 V
30
3V ^4V
20
2V
10
1V
0
1.0
2.0
VG1S – Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
ID = 10 mA
(at VDS = 10 V
4.0
VG2S = 4 V)
f = 1 MHz
3.0
2.0
1.0
0
–1.0
0 1.0 2.0 3.0 4.0 5.0
VG2S – Gate2 to Source Voltage – V
3