3SK134B Datasheet, PDF (1/5 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK134B
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz)
• Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Surface Mount Package : 4 Pins Mini Mold (EIAJ: SC-61)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
VDSX
18
V
VG1S ±8 (±10)^*1
V
VG2S ±8 (±10)^*1
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
25
mA
Total Power Dissipation
PD
200
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg –55 to +125 °C
*1 : RL ≥ 10 kΩ
PACKAGE DIMENSIONS
(Unit : mm)
2.8
+0.2
– 0.3
1.5
+0.2
– 0.1
5^o
5^o
5^o
5^o
PIN CONNECTIONS
1.Source
2.Drain
3.Gate2
4.Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
Document No. P10566EJ2V0DS00 (2nd edition)
(Previous No. TD-2398)
Date Published August 1995 P
Printed in Japan
©
1993