3SK134B Datasheet, PDF (2/5 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

3SK134B
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
SYMBOL
BVDSX
IDSX
VG1S(off)
VG2SS(off)
IG1SS
IG2SS
MIN.
18
0.4
Forward Transfer Admittance
|yfs|
25.0
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Power Gain
Gps
Noise Figure
NF
1.5
0.6
20.0
TYP.
29.0
2.5
1.1
0.02
23.0
2.4
MAX.
8.0
–2.0
–0.7
±20
±20
35.0
3.5
1.6
0.03
3.5
UNIT
V
mA
V
V
nA
nA
mS
pF
pF
pF
dB
dB
TEST CONDITIONS
VG1S = VG2S = –2 V, ID = 10 µA
VDS = 10 V, VG2S = 4 V, VG1S = 0.5 V
VDS = 10 V, VG2S = 4 V, ID = 10 µA
VDS = 10 V, VG1S = 4 V, ID = 10 µA
VDS = VG2S = 0, VG1S = ±8 V
VDS = VG1S = 0, VG2S = ±8 V
VDS = 10 V, VG2S = 4 V, ID = 10 mA
f = 1 kHz
VDS = 10 V, VG2S = 4 V, ID = 10 mA
f = 1 MHz
VDS = 10 V, VG2S = 4 V, ID = 10 mA
f = 900 MHz
IDSX Classification
Rank
Marking
IDSX (mA)
U55/UEE
U55
0.4 to 5.0
U56/UEF
U56
3.0 to 8.0
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