2SC4346 Datasheet, PDF (3/5 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING

2SC4346,4346-Z
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
12
(Note) 2SC4346-Z
Mounted on ceramic
subsutrate of 7.5 mm² x 0.7 mm
10
With infinite heatsink
8
(TC = 25˚C)
6
4
(Note)
2
Mounted on print board
0
0
50
100
150
200
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
IC(pulse)
IC(DC)
1.0
Power Dissipation Limited
PW = 1 µs
10 µs
100 µs
0.1
s/b Limited
1 ms
TC = 25˚C
0.01
1
10
100
10 ms
1000
VCE - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
2.0
1.6
1.2
IB = 100 mA
90 mA
80 mA
70 mA
60 mA
50 mA
40 mA
30 mA
20 mA
10 mA
0.8
0.4
0
0
1
2
3
4
5
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs. COLLECTOR CURRENT
100
VCE = 5 V
Pulsed
10
0.001
0.01
0.1
1
IC - Collector Current - A
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLCTOR CURRENT
IC = 5 x IB
Pulsed
10
VBE(sat)
VCE(sat)
1
0.001
0.01
0.1
1.0
10
IC - Collector Current - A
TURN-ON, STORAGE TIME AND FALL TIME vs.
COLLECTOR CURRENT
10
tstg
tf
VCC = 200 V
IC : IB1 : IB2 = 10 : 1 : −2
Pulsed
1
ton
0.1
0.1
1
10
IC - Collector Current - A
Data Sheet D17082EJ2V0DS
3