2SC4346 Datasheet, PDF (2/5 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING

2SC4346,4346-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Collector to Emitter Voltage
VCEO(SUS) IC = 2.0 A, IB1 = 0.4 A, L = 1 mH
400
Collector Cut-off Current
VCEX(SUS)1 IC = 2.0 A, IB1 = −IB2 = 0.4 A,
450
L = 180 µH, Clamped
VCEX(SUS)2 IC = 4.0 A, IB1 = 1.0 A, −IB2 = 0.4 A,
400
L = 180 µH, Clamped
ICBO
VCB = 400 V, IE = 0
ICER
VCB = 400 V, RBE = 51 Ω, TA = 125°C
ICEX1
VCB = 400 V, VBE(OFF) = −5 V
ICEX2
VCB = 400 V, VBE(OFF) = −5 V, TA = 125°C
Emitter Cut-off Current
DC Current Gain ^Note
IEBO
VEB = 5.0 V, IC = 0
hFE1
VCE = 5.0 V, IC = 5 mA
15
hFE2
VCE = 5.0 V, IC = 0.5 A
20
hFE3
VCE = 5.0 V, IC = 2.0 A
10
Collector Saturation Voltage ^Note
VCE(sat) IC = 2.0 A, IB = 0.4 A
Base Saturation Voltage ^Note
VBE(sat) IC = 2.0 A, IB = 0.4 A
Turn-on Time
ton
IC = 2.0 A, RL = 75 Ω
Storage Time
tstg
IB1 = −IB2 = 0.4 A, VCC 150 V
Fall Time
tf
See Test Circuit
Note Pulsed
TYP.
0.5
1.0
MAX.
UNIT
V
V
V
10
µA
1.0
mA
100
µA
1.0
mA
10
µA
80
1.0
V
1.5
V
0.7
µs
2.5
µs
0.3
µs
hFE CLASSIFICATION
Marking
M
hFE2
20 to 40
L
30 to 60
K
40 to 80
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
RL = 75 Ω
VIN
PW
PW = 50 ^µs
Duty Cycle ≤ 2 %
IC
IB1
T.U.T.
IB2
−VBB = −5 V
Base current
waveform
IB1
VCC = 150 V
IB2
90 %
Collector current
waveform
IC
10 %
ton
tstg tf
2
Data Sheet D17082EJ2V0DS