2SC4346 Datasheet, PDF (1/5 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SC4346,4346-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
DESCRIPTION
The 2SC4346 is a mold power transistor developed for
high-speed switching, high voltage switching, and is ideal
for use as a driver in devices such as switching regulators,
DC/DC converters, and high-frequency power amplifiers.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4346
2SC4346-Z
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
• Small package, but can control for high-current
• Low collector saturation voltage
VCE(sat) = 1.0 V MAX. (IC = 2.0 A)
• Ultra high-speed switching
tf = 0.3 µs MAX. (IC = 2.0 A)
• Base reverse bias safe operating area is wide
VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
500
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
8.0
V
Collector Current (DC)
Collector Current (pulse)
IC(DC)
IC(pulse) ^Note1
5.0
A
10
A
Base current (DC)
IB(DC)
2.5
A
Total Power Dissipation
Total Power Dissipation
PT1 (TC = 25°C)
18
W
PT2 (TA = 25°C) 1.0 ^Note2, 2.0 ^Note3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on print board
3. Mounted on ceramic substrate of 7.5 mm² x 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17082EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004