2SC4093 Datasheet, PDF (3/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
0
50
100
150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5 1
5 10
50
IC-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
20
VCE = 10 V
10
5
2
1
0.6
1
2
5
10
20
40
IC-Collector Current-mA
2SC4093
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 GHz
2
1
0.5
0.2
0.1
1
2
5
10
20
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
20
VCE = 10 V
f = 1.0 GHz
10
0
0.5 1 2
5 10 20
50
IC-Collector Current-mA
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
30
VCE = 10 V
IC = 20 mA
Gmax
20
|S21e|²
10
0
0.1
0.2
0.5
1.0
2.0
f-Frequency-GHz
3