2SC4093 Datasheet, PDF (2/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

2SC4093
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
50
120
Gain Bandwidth Product
fT
7.0
Feed-Back Capacitance
Insertion Power Gain
Cre
0.6

S21e
²
11
13
Noise Figure
NF
1.1
MAX.
1.0
1.0
250
0.95
2.0
UNIT

A

A
GHz
pF
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 10 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
Classification of hFE
Rank
R26/RBF *
R27/RBG *
R28/RBH *
Marking
R26
R27
R28
Range
50 to 100
80 to 160
125 to 250
hEF Test Condtitions: VCE = 10 V, IC = 20 mA
* Old Specification / New Specification
2