2SC4093 Datasheet, PDF (1/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gains

S21e
² = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4093-T1
3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
2SC4093-T2
3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150 C
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
5°
5°
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
©
1991