2SA1988 Datasheet, PDF (3/4 Pages) NEC – PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE

COLLECTOR SATURATION VOLTAGE AND
BASE SATURATION VOLTAGE
VS COLLECTOR CURRENT
10
IC=10IB
TA=-25°C
25°C
75°C
1.0
150°C
Pulsed
VBE (sat)
TA= 150°C
0.1
75°C
25°C
-25°C
VCE (sat)
0.01
0.01
0.1
1.0
10
IC - Collector Current - A
OUTOPUT CAPASITANCE VS
COLLECTOR TO BASE VOLTAGE
IE=0
f=1MHz
1 000
100
10
-0.1
-1.0
-10
-100
-1000
VCB - Collector to Base Voltage -V
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Semoconductor device package manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SA1988
1 000
100
DC CURRENT GAIN VS
COLLECTOR CURRENT
TA = 150°C
75°C
25°C
-25°C
VCE =-5V
Pulsed
10
-0.01
-0.1
-1.0
-10
IC - Collector Current - A
Document No.
TEI-1202
IEI-1209
C10535E
C10943X
MEI-1202
X10679E
3