2SA1988 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE

DATA SHEET
Silicon Power Transistor
2SA1988
PNP SILICON TRANSISTOR
POWER AMPLIFIER
INDUSTRIAL USE
DESCRIPTION
The 2SA1988 is PNP Silicon Power Transistor that
designed for audio frequency power amplifier.
FEATURES
• High Voltage VCEO = −200 V
• DC Current Gain hFE = 70 to 200
• TO-3P Package
PACKAGE DIMENSIONS
15.7 MAX. φ 3.2±0.2
4
4.7 MAX.
1.5
123
ORDERING INFORMATION
Type Number
Package
2SA1988
MP-88
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
−200
Collector to Emitter Voltage
VCEO
−200
Emitter to Base Voltage
VEBO
−5.0
Collector Current (DC)
IC (DC)
−7.0
2.2±0.2
1.0±0.2 0.6±0.1 2.8±0.1
5.45
5.45
V
1.Base
V
2.Collector
3.Emitter
V
MP-88
4.Fin (Collector)
A
Collector Current (pulse)
IC (pulse) *1
-10
A
Total Power Dissipantion
P2 *2
100
W
JunctionTemperature
TJ
150
°C
Storage Tempreature
Tstg
−55 to +150 °C
*1 PW ≤ 300 µs, Duty Cycle ≤ 10 % *2 TC = 25 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN.
TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE1
70
DC Current Gain
hFE2
20
Collector Saturation Voltage
VCE (sat)
−0.6
Base Saturation Voltage
VBE (sat)
−1.3
Gain Band width Product
fT
40
Output Capacitance
Cob
270
∗ Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2 %
MAX.
−50
−50
200
−2.0
−2.0
UNIT
µA
µA
−
−
V
V
MHz
pF
TEST CONDITIONS
VCB = −200 V, IE = 0
VEB = −3.0 V, IC = 0
VCE = −5.0 V, IC = −1.0 A
∗
VCE = −5.0 V, IC = −3.5 A
∗
IC = −5.0 V, IE = −0.5 V
∗
IC = −5.0 V, IE = −0.5 V
∗
VCE = −5.0 V, IC = 1.0 mA
VCB = −10 V, IC = 0, f = 1.0 MHz
The information in this document is subject to change without notice.
Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
©
1996