2SA1988 Datasheet, PDF (2/4 Pages) NEC – PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE

2SA1988
CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
DissipationS/LbimLitiemdited
20
0
50
100
150
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
-10
-1
IC(Pulse)
IC(DC)
Dissipation
PW=1ms
Limited
10ms
100ms
200ms
TC = 25 °C
-0.1 ^{Single Pulse}
-1
-10
-100
-1000
VCE - Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - °C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
-12
IB=120mA _Pulsed
-10
100mA
80mA
-8
60mA
-6
40mA
-4
20mA
-2
0
-10
-20
-30
VCE - Collector to Emitter Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth (J-C)
1
0.1
0.01
100 µ 1 m
10 m
100 m
1
10
PW - Pulse Width - s
Single Pulse
TC=25°C
100
1 000
2