MC-458CA721ESA Datasheet, PDF (1/16 Pages) NEC – 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CA721ESA, 458CA721PSA
8M-WORD BY 72-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
The MC-458CA721ESA and MC-458CA721PSA are 8,388,608 words by 72 bits synchronous dynamic RAM module
(Small Outline DIMM) on which 5 pieces of 128M SDRAM: µPD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
• 8,388,608 words by 72 bits organization (ECC type)
• Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency (MAX.) Access time from CLK (MAX.)
MC-458CA721ESA-A80
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
MC-458CA721ESA-A10
CL = 3
100 MHz
6 ns
CL = 2
77 MHz
7 ns
5 _{MC-458CA721PSA-A80}
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
5 MC-458CA721PSA-A10
CL = 3
100 MHz
6 ns
CL = 2
77 MHz
7 ns
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0, BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and Full Page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
• Unbuffered type
• Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14494EJ2V0DS00 (2nd edition)
The mark • shows major revised points.
Date Published February 2000 NS CP(K)
Printed in Japan
©
1999