NCE4606A Datasheet, PDF (3/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N and P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE4606A
P-CH Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
BV_DSS
I_DSS
I_GSS
V_GS=0V I_D=-250μA
V_DS=-30V,V_GS=0V
V_GS=±20V,V_DS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics ^(Note4)
V_GS(th)
R_DS(ON)
g_FS
V_DS=V_GS,I_D=-250μA
V_GS=-10V, I_D=-6.5A
V_DS=-5V,I_D=-6.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
C_lss
C_oss
C_rss
V_DS=-15V,V_GS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_DD=-15V, R_L=2.3Ω
V_GS=-10V,R_GEN=6Ω
V_DS=-15V,I_D=-6.5A
V_GS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
V_SD
V_GS=0V,I_S=-6.5A
Min Typ Max
-30 -33
-
-
-
-1
-
-
±100
-1.0 -1.4 -1.8
-
28
33
10
-
-
- 520
-
- 100
-
-
65
-
- 7.5
-
- 5.5
-
-
19
-
-
7
-
- 9.2
-
- 1.6
-
- 2.2
-
-
-
-1.2
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0