NCE4606A Datasheet, PDF (1/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N and P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE4606A
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4606A uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
● N-Channel
V_DS = 30V,I_D =6.5A
R_DS(ON) < 30mΩ @ V_GS=10V
● P-Channel
V_DS = -30V,I_D = -7A
R_DS(ON) < 33mΩ @ V_GS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
N-channel
P-channel
Schematic diagram
Marking and pin assignment
Package Marking and Ordering Information
SOP-8 top view
Device Marking Device
Device Package Reel Size
Tape width
NCE4606A
NCE4606A
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Quantity
2500 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
T_A=25℃
T_A=70℃
Maximum Power Dissipation
T_A=25℃
Operating Junction and Storage Temperature Range
Thermal Characteristic
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
N-Channel
30
±20
6.5
5.4
30
2.0
-55 To 150
P-Channel
-30
±20
-7
-5.8
-30
2.0
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Resistance,Junction-to-Ambient ^(Note2)
Thermal Resistance,Junction-to-Ambient ^(Note2)
R_θJA
R_θJA
N-Ch
P-Ch
62.5
℃ /W
62.5
℃ /W
Wuxi NCE Power Semiconductor Co., Ltd
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