NCE4606A Datasheet, PDF (2/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N and P-Channel Enhancement Mode Power MOSFET

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NCE4606A
N-CH Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
BV_DSS
I_DSS
I_GSS
V_GS=0V I_D=250μA
V_DS=30V,V_GS=0V
V_GS=±20V,V_DS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics ^(Note4)
V_GS(th)
R_DS(ON)
g_FS
V_DS=V_GS,I_D=250μA
V_GS=10V, I_D=6A
V_DS=5V,I_D=6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
C_lss
C_oss
C_rss
V_DS=15V,V_GS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_DD=15V, R_L=2.5Ω
V_GS=10V,R_GEN=3Ω
V_DS=15V,I_D=6A,
V_GS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
V_SD
V_GS=0V,I_S=6A
Min
30
-
-
1
-
15
-
-
-
-
-
-
-
-
-
-
-
Typ
33
-
-
1.6
20
-
255
45
35
4.5
2.5
14.5
3.5
13
5.5
3.5
0.8
Max
-
1
±100
3
30
-
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Wuxi NCE Power Semiconductor Co., Ltd
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