N08L083WC2C Datasheet, PDF (2/9 Pages) NanoAmp Solutions, Inc. – 8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 8 bit

NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A19
Page
Address
Decode
Logic
CE1
CE2
WE
Control
OE
Logic
1024K
x 8 bit
RAM Array
N08L083WC2C
Advance Information
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Functional Description
CE1 CE2 WE OE
I/O₀ - I/O₇
MODE
H
X
X
X
X
L
X
X
L
H
L
X¹
High Z
High Z
Data In
Standby
Standby
Write³
L
H
H
L
L
H
H
H
Data Out
High Z
Read
Active
1. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
POWER
Standby
Standby
Active
Active
Active
Capacitance¹
Item
Symbol
Test Condition
Min
Input Capacitance
I/O Capacitance
C_IN
V_IN = 0V, f = 1 MHz, T_A = 25^oC
C_I/O
V_IN = 0V, f = 1 MHz, T_A = 25^oC
1. These parameters are verified in device characterization and are not 100% tested
Max
10
10
Unit
pF
pF
Stock No. 23379-A
2
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.