MRF373 Datasheet, PDF (9/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL TWO–TONE BROADBAND CHARACTERISTICS
–10
–15 ^V_D^{DFDRE=Q2U8EVNdCc} _{Y = 6 MHz}
–20 ^{IDQ = 250 mA per side}
–25
–30
470 MHz
–35
660 MHz
–40
–45
860 MHz
–50
1
10
100
1000
Pout, OUTPUT POWER (WATTS PEP)
Figure 11. Intermodulation Distortion versus Output
Power (MRF373S Broadband Push–Pull Fixture)
15
14 ^VD^{DFDRE=Q2U8EVNdCc} Y = 6 MHz
IDQ = 250 mA per side
13
12
860 MHz
11
660 MHz
10 _{470 MHz}
9
8
1
10
100
1000
Pout, OUTPUT POWER (WATTS PEP)
Figure 12. Broadband Power Gain versus Output
Power (MRF373S Broadband Push–Pull Fixture)
50
40 ^{VDDFDRE=Q2U8EVNdCc Y = 6 MHz}
IDQ = 250 mA per side
30
20
860 MHz
660 MHz
470 MHz
10
0
1
10
100
1000
Pout, OUTPUT POWER (WATTS PEP)
Figure 13. Efficiency versus Output Power
(MRF373S Broadband Push–Pull Fixture)
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
9