MRF373 Datasheet, PDF (6/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS FOR MRF373 IN SINGLE–ENDED FIXTURE
18
17
IDQ = 500 mA
16
400 mA
300 mA
15
200 mA
100 mA
14
VDD = 28 V
f = 860 MHz
13
30
35
40
45
50
Pout, OUTPUT POWER (dBm)
Figure 7. Power Gain versus Output Power
22
20 VDD = 28 V
IRL
IDQ = 200 mA
18 _{Pout = 60 W (CW)}
16
Gp
14
58
η
57
56
55
54
12
53
10
52
8
51
6
50
800
820
840
860
880
900 920
f, FREQUENCY (MHz)
Figure 8. Performance in Narrowband Circuit
120
100
Ciss
80
60
Coss
40
20
Crss
0
0
10
20
30
40
50
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 9. Capacitance versus Voltage
f
MHz
400
450
500
550
600
650
700
750
800
850
900
Table 1. Common Source S–Parameters (VDS = 28 V, ID = 2.0 A)
S11
|S11|
φ
0.921
182
0.922
181
0.924
180
0.926
179
0.929
178
0.932
177
0.936
176
0.940
176
0.945
175
0.951
174
0.957
173
S21
|S21|
φ
2.23
52
1.95
49
1.70
46
1.49
42
1.31
38
1.16
35
1.03
31
0.93
28
0.84
26
0.78
24
0.72
24
S12
|S12|
φ
0.009
39
0.009
53
0.010
64
0.011
72
0.013
78
0.015
81
0.017
82
0.019
82
0.021
82
0.023
80
0.025
78
S22
|S22|
φ
0.824
184
0.832
184
0.841
184
0.851
183
0.860
183
0.870
182
0.881
182
0.892
181
0.904
180
0.917
180
0.929
179
MRF373 MRF373S
6
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA