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MRF373 Datasheet, PDF (1/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Is Not Recommended for New Design.
The next generation of higher performance products are in development. Visit our online
Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates.
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies from 470 – 860 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common source amplifier applications in
28 volt transmitter equipment.
• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
D
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
G
S
Order this document
by MRF373/D
MRF373
MRF373S
60 W, 470 – 860 MHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
CASE 360B–03, STYLE 1
(MRF373)
CASE 360C–03, STYLE 1
(MRF373S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MRF373S
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
MRF373S
MRF373
Symbol
RθJC
RθJC
Value
65
± 20
7
173
1.33
– 65 to +150
200
Max
0.75
1
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
© MMotoOroTlaO, IRncO. 2L0A00WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
1