MRF275G Datasheet, PDF (8/12 Pages) Motorola, Inc – 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

BIAS 0 – 6 V
R1
R2
C3
C4
T1
D.U.T.
C1
C2
C6
C5
L2
C8
C9
L1
T2
C7
+
C10
28 V
–
C1
C2, C3, C7, C8
C4, C9
C5
C6
C10
L1
L2
8.0 – 60 pF, Arco 404
1000 pF, Chip Capacitor
0.1 µF, Chip Capacitor
180 pF, Chip Capacitor
100 pF and 130 pF,
Chips in Parallel
0.47 µF, Chip Capacitor, 1215 or
Equivalent, Kemet
10 Turns AWG #16, 1/4″ I.D.,
Enamel Wire, Close Wound
Ferrite Beads of Suitable Material
for 1.5 – 2.0 µH Total Inductance
^ ^{Board material}
062″ fiberglass (G10),
ε_r 5, Two sided, 1 oz. Copper.
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent.
R1
100 Ω, 1/2 W
R2
1.0 k Ω, 1/2 W
T1
4:1 Impedance Ratio, RF Transformer
Can Be Made of 25 Ω, Semi Rigid Coax,
47 – 52 Mils O.D.
T2
1:9 Impedance Ratio, RF Transformer.
Can Be Made of 15 – 18 Ω, Semi Rigid
Coax, 62 – 90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
Figure 13. 225 MHz Test Circuit
MRF275G
8
MOTOROLA RF DEVICE DATA