MRF275G Datasheet, PDF (5/12 Pages) Motorola, Inc – 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

TYPICAL CHARACTERISTICS
1000
Coss
100
Ciss
Crss
10
VGS = 0 V
f = 1.0 MHz
1
0
5
10
15
20
25
30
VDS, DRAIN–SOURCE VOLTAGE (V)
Figure 8. Capacitance versus Drain–Source Voltage*
*Data shown applies only to one half of
device, MRF275G
1.3
VDD = 28 V
1.2
1.1
1
ID = 4 A
2A
0.9
3A
0.8
0.1 A
0.7
–25
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 9. Gate–Source Voltage versus
Case Temperature
100
TC = 25°C
10
1
1
10
100
VDS, DRAIN–SOURCE VOLTAGE (V)
Figure 10. DC Safe Operating Area
MOTOROLA RF DEVICE DATA
MRF275G
5