MRF275G Datasheet, PDF (1/12 Pages) Motorola, Inc – 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed primarily for wideband large–signal output and driver stages from
100 – 500 MHz.
• Guaranteed Performance @ 500 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 10 dB (Min)
Efficiency — 50% (Min)
100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
• Overall Lower Capacitance @ 28 V
Ciss — 135 pF
Coss — 140 pF
Crss — 17 pF
• Simplified AVC, ALC and Modulation
D
Typical data for power amplifiers in industrial and
commercial applications:
G
• Typical Performance @ 400 MHz, 28 Vdc
Output Power — 150 Watts
G
Power Gain — 12.5 dB
Efficiency — 60%
• Typical Performance @ 225 MHz, 28 Vdc
Output Power — 200 Watts
Power Gain — 15 dB
Efficiency — 65%
S
(FLANGE)
D
Order this document
by MRF275G/D
MRF275G
150 W, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
100 – 500 MHz
RF POWER FET
CASE 375–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Value
65
65
± 40
26
400
2.27
– 65 to +150
200
Max
0.44
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF275G
1