MRF5S21100LR3 Datasheet, PDF (7/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor, Inc.
Z_load*
f = 2100 MHz
f = 2200 MHz
Z_o = 10 Ω
Z_source
f = 2100 MHz
f = 2200 MHz
V_DD = 28 Vdc, I_DQ = 1050 mA, P_out = 23 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2100
2120
3.4 - j7.2
3.4 - j6.5
1.2 - j2.1
1.4 - j2.3
2160
4.9 - j7.0
2.2 - j3.0
2200
3.4 - j8.6
1.7 - j2.1
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF5S21100LR3 MRF5S21100LSR3
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Go to: www.freescale.com
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