MRF5S21100LR3 Datasheet, PDF (5/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
15
40
14 G_ps
35
13
30
12 ^η
25
11
V_DD = 28 Vdc, P_out = 23 W (Avg.), I_DQ = 1050 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
20
10 _IRL
9
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
−20
0
−25
−10
8 _IM3
−30
−20
7
−35
−30
6 _ACPR
−40
−40
5
−45
−50
2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - DCMA Broadband Performance
16
15 I_DQ = 1400 mA
1250 mA
14 _{1050 mA}
850 mA
13
650 mA
12
V_DD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
11
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−15
V_DD = 28 Vdc
−20 _{f1 = 2135 MHz, f2 = 2145 MHz}
Two−Tone Measurement, 10 MHz Tone Spacing
−25
−30
−35
I_DQ = 1400 mA
−40
−45
1250 mA
−50
650 mA
−55
1
850 mA ^{1050 mA}
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−20
−25
−30 3rd Order
−35
−40
5th Order
−45
7th Order
−50
−55
−60
0.1
V_DD = 28 Vdc, P_out = 100 W (PEP), I_DQ = 1050 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
1
10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
56
Ideal
55
P3dB = 51.88 dBm (154.17 W)
54
53
52 ^{P1dB = 51.18 dBm (131.22 W)}
51
Actual
50
V_DD = 28 Vdc, I_DQ = 1050 mA
49
Pulsed CW, 8µsec(on), 1msec(off)
Center Frequency = 2140 MHz
48
34 35 36 37 38 39 40 41 42
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S21100LR3 MRF5S21100LSR3
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Go to: www.freescale.com
5