MRF5S21100LR3 Datasheet, PDF (6/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor, Inc.
40
35
V_DD = 28 Vdc, I_DQ = 1050 mA
f1 = 2135 MHz, f2 = 2145 MHz
30
2x W−CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
25
−15
η −20
−25
IM3
−30
20
−35
15
G_ps
−40
10
−45
ACPR
5
−50
0
1
−55
10
P_out, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
−20
3.84 MHz
−30
Channel BW
−40
−50
−60
−70
−80
−90
−ACPR @ +ACPR @
−100 _{−IM3 @}
3.84 MHz BW 3.84 MHz BW
−110 ^{3.84 MHz BW}
−120
−25 −20 −15 −10 −5 0 5 10
f, FREQUENCY (MHz)
+IM3 @
3.84 MHz BW
15 20 25
Figure 9. 2-Carrier W-CDMA Spectrum
100
10
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
10⁹
10⁸
10⁷
10⁶
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (_C)
This above graph displays calculated MTBF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I_D2 for MTBF in a particular application.
Figure 11. MTBF Factor versus Junction
Temperature
MRF5S21100LR3 MRF5S21100LSR3
MOTOROLA RF DEVICE DATA
6
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