MRF3010 Datasheet, PDF (7/8 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

VGG
INPUT
(NOTE 1)
L1
R1
C5
C4
INPUT
C1
C2
C6
R2
R4
1.71″
C3
C10 C11
C9
L2
C7 C8
L3
R3
C13 –
(NOTE 2) +
VDD
INPUT
OUTPUT
C12
C1, C6, C10, C12
C2, C3, C7, C8
C4, C11
C5, C9
C13
L1
L2
L3
24 pF, “A” Chip Capacitor, ATC
0.8–8.0 pF, Variable Capacitor, Johansen Gigatrim
240 pF, “A” Chip Capacitor, ATC
0.1 µF, Ceramic Capacitor
50 µF, 50 V, Electrolytic Capacitor
VK200
2 Turns, 0.175′′ ID, 20 AWG, Close Wound
10 Turns, 20 AWG, Close Wound
R1
1 kΩ, 1/4 W Resistor
R2
220 Ω, 1/4 W Resistor
R3
10 kΩ, 2 W Resistor
R4
10 kΩ, 1/8 W Resistor
NOTES:
(1) L1 is gate input from Endplate
(2) L3 is wrapped around R3
Figure 6. 1.6 GHz Test Circuit Layout
MOTOROLA RF DEVICE DATA
MRF3010
7