MRF3010 Datasheet, PDF (2/8 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
VGS(th)
2
Drain–Source On–Voltage
(VGS = 10 V, ID = 1 A)
VDS(on)
–
Forward Transconductance
(VDS = 10 V, ID = 1 A)
gfs
0.35
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
–
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
–
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
–
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Gps
9.5
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
η
45
Output Mismatch Stress
(VDS = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1600 MHz,
Ψ
Load VSWR 30:1 at All Phase Angles)
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Zin
–
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Zol
–
Typ
Max
2.5
5
1.5
–
0.55
–
15
–
9
–
0.7
–
10.5
–
50
–
No Degradation in Output Power
3.1+j7.18
–
6.16–j4.75
–
Unit
Vdc
Vdc
mhos
pF
pF
pF
dB
%
Ω
Ω
VGG
INPUT
L1
R1
RF
INPUT
Z1
C1
R2
C4 C5
C6
Z2
C2
Z3
C3
R4
DUT
L2
Z4
L3
C9 C10 C11
R3
VDD
+
INPUT
C13
Z5
C7
Z6
C8
RF
C12
OUTPUT
C1, C6, C10, C12 24 pF, “A” Chip Capacitor, ATC
R2
C2, C3, C7, C8 0.8–8.0 pF, Variable Capacitor, Johansen Gigatrim
R3
C4, C11
240 pF, “A” Chip Capacitor, ATC
R4
C5, C9
0.1 µF, Ceramic Capacitor
Z1
C13
50 µF, 50 V, Electrolytic Capacitor
Z2
L1
Ferroxcube VK200–19/4B
Z3
L2
2 Turns, 0.175′′ ID, 20 AWG, Close Wound
Z4
L3
10 Turns, 20 AWG, Close Wound
Z5
R1
1 kΩ, 1/4 W Resistor
Z6
Figure 1. 1.6 GHz Test Circuit Schematic
220 Ω, 1/4 W Resistor
10 kΩ, 2 W Resistor
10 kΩ, 1/8 W Resistor
0.081′′ x 0.42′′ Microstrip
0.081′′ x 1.24′′ Microstrip
0.32′′ x 0.48′′ Microstrip
0.35′′ x 0.5′′ Microstrip
0.15′′ x 0.44′′ Microstrip
0.081′′ x 1.165′′ Microstrip
MRF3010
2
MOTOROLA RF DEVICE DATA