MRF3010 Datasheet, PDF (1/8 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistor
N–Channel Enhancement–Mode Lateral
MOSFET
Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
CW amplifier applications.
• Guaranteed Performance @ 1.6 GHz, 28 Volts
D
Output Power = 10 Watts
Minimum Gain = 9.5 dB @ 10 Watts
Minimum Efficiency = 45% @ 10 Watts
• High Gain, Rugged Device
• Bottom Side Source Eliminates DC Isolators,
Reducing Common Mode Inductances
G
• Broadband Performance of This Device Makes It
Ideal for Applications from 800 to 1700 MHz,
Common–Source Class AB Operation.
• Typical Performance at Class A Operation:
S
Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A,
Gain = 12.5 dB, IMD = –32 dB
• Characterized with Small–Signal S–Parameters from 500 to 2500 MHz
• Capable of Handling 30:1 VSWR, @ 28 Vdc
• Circuit Board Available Upon Request by Contacting RF Tactical Marketing
in Phoenix, AZ
Order this document
by MRF3010/D
MRF3010
10 W, 1.6 GHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 360B–01, STYLE 1
MAXIMUM RATINGS
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
Rating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 1 µA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
Symbol
VDSS
VGS
Tstg
TJ
Min
65
–
–
Value
65
± 20
– 65 to +150
200
Typ
Max
–
–
–
10
–
1
Unit
Vdc
Vdc
°C
°C
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R98F DEVICE DATA
MRF3010
1