MRF21125 Datasheet, PDF(7/12 Page) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MRF21125 Datasheet, PDF (7/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

◁

f = 2110 MHz

Zin

2170 MHz

Zo = 10 â¦

f = 2110 MHz

ZOL*

2170 MHz

VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg.),

2-Carrier W-CDMA

Zin

MHz

â¦

ZOL*

â¦

2110

2140

2170

3.81 + j6.86

4.33 + j7.90

4.84 + j8.46

1.56 â j1.58

1.53 â j1.90

1.48 â j2.26

Zin = Complex conjugate of source impedance.

ZOL* = Complex conjugate of the optimum load

impedance at a given output power, voltage,

IMD, bias current and frequency.

Note 1: ZOL* was chosen based on tradeoffs between gain, output

power, drain efficiency and intermodulation distortion.

Note 2: Measurements were taken on the MRF21125 test circuit

with SMA Launchers.

Input

Matching

Network

Device

Under Test

Output

Matching

Network

Z in

Z OL*

Figure 9. Series Equivalent Input and Output Impedance

MOTOROLA RF DEVICE DATA

MRF21125 MRF21125S MRF21125SR3

▷