MRF21125 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µAdc)
V_(BR)DSS
65
—
—
Vdc
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
µAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
µAdc
ON CHARACTERISTICS
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
g_fs
—
10.8
—
S
Gate Threshold Voltage
(V_DS = 10 V, I_D = 300 µA)
V_GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V_DS = 28 V, I_D = 1300 mA)
V_GS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(V_GS = 10 V, I_D = 1 A)
V_DS(on)
—
0.12
—
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
5.4
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth.
Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Common–Source Amplifier Power Gain
G_ps
12
13
—
dB
(V_DD = 28 Vdc, P_out = 20 W Avg, 2–carrier W–CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 20 W Avg, 2–carrier W–CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
17
18
—
%
Third Order Intermodulation Distortion
IM3
—
–43
–40
dBc
(V_DD = 28 Vdc, P_out = 20 W Avg, 2–carrier W–CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 –15 MHz and f2 +15 MHz referenced to
carrier channel power.)
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 20 W Avg, 2–carrier W–CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 –10 MHz and f2 +10 MHz referenced to
carrier channel power.)
–45
–40
dBc
Input Return Loss
IRL
(V_DD = 28 Vdc, P_out = 20 W Avg, 2–carrier W–CDMA, I_DQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
—
–12
–9.0
dB
Output Mismatch Stress
Ψ
(V_DD = 28 Vdc, P_out = 125 W CW, I_DQ = 1600 mA, f = 2170 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF21125 MRF21125S MRF21125SR3
2
MOTOROLA RF DEVICE DATA