MRF21125 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF21125/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2–carrier W–CDMA Performance for V_DD = 28 Volts, I_DQ = 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — –43 dBc
ACPR — –45 dBc
• 100% Tested under 2–carrier W–CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21125
MRF21125S
MRF21125SR3
2170 MHz, 125 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
(NI–880)
(MRF21125)
CASE 465C–02, STYLE 1
(NI–880S)
(MRF21125S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
+15, –0.5
330
1.89
–65 to +150
200
Class
2 (Minimum)
M3 (Minimum)
Max
0.53
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
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MRF21125 MRF21125S MRF21125SR3
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