MRF21120 Datasheet, PDF (7/8 Pages) Motorola, Inc – The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET

f = 2170 MHz
Z_source
2110 MHz ^{Zo = 10 Ω}
Z_load
2110 MHz f = 2170 MHz
V_DD = 28 V, I_DQ = 2 500 mA, P_out = 120 W PEP
f
MHz
2110
2140
2170
Z_source
Ω
3.7 + j2.0
3.5 + j2.4
3.1 + j2.5
Z_load
Ω
4.9 + j2.8
5.1 + j2.7
5.2 + j2.5
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
-
Matching
Network
-
Z _source
+
Z _load
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF21120
7