MRF21120 Datasheet, PDF (6/8 Pages) Motorola, Inc – The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
14
-20
13
1800 mA
1500 mA
12
1300 mA
1100 mA
11
1000 mA
850 mA
10
600 mA
V_DD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
9
0.10
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 3. Power Gain versus Output Power
13
G_ps
12
11
η
10
9 ^{VDD = 28 Vdc, IDQ = 2 x 500 mA}
Two-Tone, 100 kHz Tone Spacing
8
VSWR
7
6
IMD
5
2100
2120
2140
2160
2180
f, FREQUENCY (MHz)
Figure 5. Class AB Broadband
Circuit Performance
50
45
40
35
-24
-26
-28
-30
-32
2200
-30
-40
600 mA
-50
1800 mA
1500 mA
1300 mA
850 mA
1100 mA
V_DD = 28 Vdc
-60
1000 mA
f1 = 2170.0 MHz
f2 = 2170.1 MHz
0.10
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion
versus Output Power
Ref Lv1
-5 dBm
MARKER 1 [T1] RBW
-22.77 dBm VBW
2.17000000 GHz SWT
30 kHZ RF Att
1 MHz
2 s Unit
10 dB
dBm
-10
1 [T1]
A
-22.77 dBm
-20
1
2.17000000 GHz
CH PWR
-2.95 dBm
-30
ACR UP
-45.14 dB
-40
ACR LOW
-45.45 dB _1RM
-50
2.0
-60
-70
1.5 _-80
-90 c11
1.0 ^-100
Center 2.17 GHz
c11
c0
1.5 MHz
cu1
c0
cu1
Span 15 MHz
Figure 6. 2.17 GHz W–CDMA Mask at
14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
14
60
G_ps
12
40
10
20
η
8
0
V_DD = 28 Vdc
6
I_DQ = 2 x 750 mA
-20
f = 2170 MHz
4 ^{ACPR DOWN}
-40
ACPR UP
2
1.0
-60
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain, Efficiency, ACPR
versus Output Power (W–CDMA)
13
80
12
60
G_ps
11
40
10
20
η
9
0
8 ^{VDD = 28 Vdc, IDQ = 2 x 500 mA}
-20
f = 2170.0 MHz, f2 = 2170.1 MHz
7
-40
IMD
6
-60
5
0.10
1.0
-80
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency, IMD
versus Output Power
MRF21120
6
MOTOROLA RF DEVICE DATA