MRF21120 Datasheet, PDF (3/8 Pages) Motorola, Inc – The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued)
Common–Source Amplifier Power Gain
(V_DD = 28 Vdc, P_out = 120 W CW, I_DQ = 2
f1 = 2170.0 MHz)
500 mA,
G_ps
—
10.5
—
dB
Drain Efficiency
(V_DD = 28 Vdc, P_out = 120 W CW, I_DQ = 2
f1 = 2170.0 MHz)
500 mA,
η
—
42
—
%
Output Mismatch Stress
Ψ
(V_DD = 28 Vdc, P_out = 120 W CW, I_DQ = 2 500 mA,
f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(2) Device measured in push–pull configuration.
No Degradation In Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
MRF21120
3